Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)

...package types for general purpose diodes include transistor outline (TO), diode outline (DO), small outline transistor (SOT), and small outline diode (SOD). Other general purpose diodes are available in a discrete package (DPAK) or in D2PAK, a large... Search by Specification | Learn More about General Purpose Diodes

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts Search by Specification | Learn More about Metal-oxide Semiconductor FET (MOSFET)

Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical Search by Specification | Learn More about Power Bipolar Transistors

Specialty transistors are specialty or proprietary products and accessories related to transistors. Learn More about Specialty Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors

RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters Search by Specification | Learn More about Bipolar RF Transistors

RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors

Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written ß) and require less space than configurations that use two Search by Specification | Learn More about Darlington Transistors

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching Search by Specification | Learn More about Insulated Gate Bipolar Transistors (IGBT)

Temperature signal conditioners accept outputs from temperature measurement devices such as resistance temperature detectors (RTDs), thermocouples, and thermistors. They then filter, amplify, and/or convert these outputs to digital signals Search by Specification | Learn More about Temperature Signal Conditioners

Signal transformers transfer information from one circuit to another by electromagnetic induction. They are used to increase or decrease the voltage from one side of a power transformer to the other. Search by Specification | Learn More about Signal Transformers

Spectrum analyzers and signal analyzers display raw, unprocessed signal information such as voltage, power, period, wave shape, sidebands, and frequency. They can provide the user with a clear and precise window into the frequency spectrum Search by Specification | Learn More about Spectrum Analyzers and Signal Analyzers