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The Ultimate Resource for Engineering and Technical Research. (Learn More) |
Signal amplifiers accept signals from sensors and other devices and amplify them to levels suitable for further processing or digitization by computer elements. Search by Specification | Learn More about Signal Amplifiers
Amplifier and comparator chips are board-level components for amplifying voltage, current, or power. Search by Specification | Learn More about Amplifier and Comparator Chips
Instrumentation amplifier chips are precision amplifier circuits with both high-impedance differential inputs and high common-mode rejection. Search by Specification | Learn More about Instrumentation Amplifier Chips
Pulse width modulated (PWM) amplifier chips generate a current that switches between high and low output levels. PWM amplifiers have a much higher power capability for a given volume than linear amplifiers. They are also less expensive. Search by Specification | Learn More about PWM Amplifier Chips
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit. Search by Specification | Learn More about Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about RF Transistors
Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals. Search by Specification | Learn More about Power Bipolar Transistors
Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Search by Specification | Learn More about Small-signal Bipolar Transistors (BJT)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Search by Specification | Learn More about Junction Field-Effect Transistors (JFET)
RF bipolar transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More about Bipolar RF Transistors
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More about RF MOSFET Transistors
Sample-and-hold amplifiers freeze analog voltage instantly. During this process the HOLD command is issued and analog voltage is available for an extended period. Search by Specification | Learn More about Sample-and-Hold Amplifiers
Video amplifier chips are used in circuits to process video signals. Search by Specification | Learn More about Video Amplifier Chips
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. Search by Specification | Learn More about RF Amplifiers
Small outline integrated circuit (SOIC) packaging is also available for PWM amplifier chips. TO-3 is a transistor outline (TO) package with three leads. TO-92, another transistor outline package, is often used for low power devices. By contrast, TO-220... Search by Specification | Learn More about Power Operational Amplifiers
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MAC MultiAmplifier Card Dover Flexo Electronics, Inc.
Model 7600 Series Wideband Power Amplifiers Krohn-Hite Corporation
Strain Gage Amplifier Columbia Research Labs, Inc.
Electronic Racks Capacitec, Inc.
LVDT or RVDT Amplifier / Signal Conditioner Mantracourt Electronics Ltd.
Digitizers Aid British Antarctic Survey Mantracourt Electronics Ltd.
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Bipolar transistors, having 2 junctions, are 3 terminal semiconductor devices. The three terminals of a bipolar transistor are emitter, collector, and base. The transistor can either be a NPN transistor or PNP transistor. (read more)
NPN or PNP Bipolar RF Transistors.
If you have need of VHF Amplifiers (136-210 Mhz), American Microsemiconductor will support MHW607-1, -2, -3, and -4 types used primarily in portable hand held radios. (read more)
LS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Ideal for amplifier input applications seeking Low Offset(0.5 to 3mV), Low Drift, High Gain(400 beta), High Breakdown (25 to 60 Volts)and Low Capacitance(3pf). Replacement for Analog Device MAT01, MAT02 series and Intersil IT120, IT130 series. Available in Surface Mount and Thru-Hole Versions. Instant Availability (read more)
WHAT TO KNOW BEFORE YOU BUY YOUR NEXT AMPLIFIER By Chris Heavens, General Manager, AR Modular RF (read more)
The ACPL-785J isolation amplifier is designed for current sensing in electronic motor drives. In a typical implementation, motor currents flow through an external resistor and the resulting analog voltage drop is sensed by the ACPL-785J. (read more)
The ACPL-782T isolation amplifier family was designed for current sensing in electronic motor drives and battery system. A differential output voltage is created on the other side of the ACPL-782T optical isolation barrier. The ACPL-782T was designed to ignore very high common-mode transient slew rates (of at least 10 kV/μs). (read more)
PERFORMANCE CONTROLS, INC. ® designs, manufactures, and services high bandwidth, low noise electronics for precision amplification and/or control of voltages and currents in medical, government and industrial markets. PCI's safe and reliable products use the latest technology to overcome challenges associated with high power and/or harsh environments (read more)
Model AMF-8B-18002650-70-37P-PS is a self-cooled 3 RU rack-mount high power amplifier, covering 18-26.5 GHz and delivering minimum of 5W of power. The SMA connectorized box is 3.47" (read more)
The MSK 182 and 183 are dual high power monolithic operational amplifiers ideal for use with a wide variety of loads. With operation from either single or dual supplies, they offer excellent design flexibility. (read more)
Gradient Amplifiers provide power to generate the variable (gradient) magnetic field component for the MRI process. The fidelity, repeatability, stability and bandwidth of the gradient amplifier, along with power available are key parameters affecting the quality of the MRI image. (read more)
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| 2N5989 | Amazon | American Microsemiconductor | BISS | 2N5989 |
| MJ15024 | Amazon | American Microsemiconductor | BISS | MJ15024 |
| 2SD2142KT146 | Future Electronics | ROHM SEMICONDUCTOR | Not Provided | 2SD2142K Series 30 V 0.3 A SMT NPN High-Gain Amplifier Transistor - SMT-3 |
| NTE2410 | Newark | NTE ELECTRONICS | Bipolar | Silicon Npn Transistor, Amplifier/Driver, Nte2410, 3 Lead, Sot-23 |
| MPS6521 | Newark | FAIRCHILD SEMICONDUCTOR | Bipolar | Amplifiers - Operational Amplifier (Op-Amp); DC Current Gain Min (hfe):150; Operating Temperature Range:-55?C to +150?C; C-E Breakdown Voltage:25V; DC Current Gain Max (hfe):600; Leaded Process Compatible:Yes; Package/Case:3-TO-92 RoHS Compliant: Yes |
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Application Note 278 Designing with a New Super Fast Dual... speed, its input impedance, and its output current sinking ca- encing amplifier, the LM359, offers spectacular speed im- pability for line driver See National Semiconductor Information |
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The LM3900: A New Current-Differencing Quad of Plus or Minus... See National Semiconductor Information |
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NXP Semiconductors general-purpose transistor BC846BS - 65 V, 100 mA NPN/NPN general-purpose transistor BC846S - NPN general purpose double transistor BC847BPN - 45 V, See NXP Information |
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Analog Devices: Analog Dialogue: Very Low Voltage,... Since most amplifier designs required at least two V(TH)s to operate, the minimum supply voltage was > 3 V, even at room temperature. See Analog Devices, Inc. Information |
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19-0269; Rev 0; 9/94 5V/3.3V or Adjustable, Low-Dropout, Low... 19-0269; Rev 0; 9/94 5V/3.3V or Adjustable, Low-Dropout, Low IQ, 500mA Linear Regulators MAX603/MAX604 _______________General Description |
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MATLAB Central - Files 3 23 Jan 2008 Photodiode Transimpedance See MathWorks, Inc. (The) Information |
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Low power dual operational amplifiers 2 - 7 Application areas include transducer amplifiers, 3 + - 6 DC gain blocks and all the conventional op-amp circuits, which can now be more easily See Digi-Key Corporation Profile & Catalog |
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STMicroelectronics | 3 stages RF power amplifier demonstration... 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E See STMicroelectronics, Inc. Information |
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Fairchild New Product Highlights Q3 2004 Signal Discrete (Continued) FAN4174 Single, Ultra Low Cost, RRIO CMOS Amplifier FMG2G400LS60 Molding Type Module FAN5068 DDR-1/DDR-2 plus ACPI See Fairchild Semiconductor Corporation Information |
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Fairchild Semiconductor - Site Search - MOSFET IC (11) Charge Pump Regulators (4) Comparator (15) Current Sense Amplifier (1) DAC (1) DC/DC Converter (Integrated) (27) DIMM (4) DrMOS (6) Emitting See Fairchild Semiconductor Corporation Information |